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Ultra-High-Efficiency White
LED Drivers
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1; V IN = 3.3V, SETI = BITA = BITB = BITC = SEL = IN, MODE = GND, C OUT = 4.7μF, C REF = 0.22μF, T A = -40 ° C to
+85 ° C , unless otherwise noted.) (Note 3)
PARAMETER
LD1 to LD8 Regulation Voltage
SETI High-Level Threshold
(18mA LED Default Current)
SETI Low-Level Threshold
(0.5mA LED Default Current)
SETI Output Current
CONDITIONS
SETI = IN, I LX = 120mA (MAX1984),
110mA (MAX1985), 98mA (MAX1986)
2.7V < V IN < 5.5V
2.7V < V IN < 5.5V
SETI = GND
MIN
80
V IN - 0.4
50
40
TYP
MAX
120
125
100
UNITS
mV
V
mV
μA
OUTPUT CURRENT SOURCE
LD1 to LD8 On-Resistance
LD1 to LD8 Current-Source
Compliance
I LD_ = 25mA, V OUT = 3.5V
BITA = BITB = BITC = IN, 80mV < V LD_ < 1V (Note 1)
4
8
?
%
DIGITAL BRIGHTNESS CONTROL
2-Bit Control DAC LSB
3-Bit Control DAC LSB
MODE = SETI = BITB = IN, BITA = BITC = GND
SETI = BITC = IN, MODE = BITA = BITB = GND
(Note 2)
26
7
39
21
%
%
DPWM BRIGHTNESS CONTROL
DPWM Input Supply Range
DPWM Shutdown Duty Cycle
MODE = BITC = IN
BITC = GND
2.3
3
5.5
7
V
%
Note 1: Current variation is caused by the current source voltage changes.
Note 2: Measurement is with respect to 100% of the programmed LED output current.
Note 3: Specifications to -40 ° C are guaranteed by design, not production tested.
_______________________________________________________________________________________
5
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